Electrical Characterisation of Shallow Pre-Amorphised +n junctions in silicon
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Influence of implant induced vacancies and interstitials on boron diffusion in siliconApplied Physics Letters, 1987
- Deep Level Generation Centres In Low Temperature Annealed Pre-Amorphised SiliconPublished by SPIE-Intl Soc Optical Eng ,1987
- Defects and leakage currents in BF2-implanted preamorphized siliconJournal of Applied Physics, 1986
- Kinetics of thermal nitridation processes in the study of dopant diffusion mechanisms in siliconApplied Physics Letters, 1985
- Formation of Shallow p+n Junction by Low Temperature AnnealingJapanese Journal of Applied Physics, 1983