Improvement of poly emitter n-p-n transistor matching in a 0.6 micron mixed signal technology
- 22 December 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Matching properties of MOS transistorsIEEE Journal of Solid-State Circuits, 1989