Indium tert-butylthiolates as single source precursors for indium sulfide thin films: Is molecular design enough?
- 4 May 1993
- journal article
- Published by Elsevier in Journal of Organometallic Chemistry
- Vol. 449 (1-2) , 95-104
- https://doi.org/10.1016/0022-328x(93)80111-n
Abstract
No abstract availableThis publication has 35 references indexed in Scilit:
- Metal–Organic chemical vapour deposition of polycrystalline tetragonal indium sulphide (InS) thin filmsAdvanced Materials for Optics and Electronics, 1992
- Metal-Organic chemical vapour deposition (mocvd) growth utilising cu(acac)2 (acac pentane-3, 5-dionato) as a source for copper-containing materials: Influence of carrier gas on surface morphologyAdvanced Materials for Optics and Electronics, 1992
- The preparation of (Al2O3)x(SiO2)y thin films using [al(OSiEt3)3]2 as a single‐source precursorAdvanced Materials for Optics and Electronics, 1992
- Chemical vapor deposition of cubic gallium sulfide thin films: a new metastable phaseChemistry of Materials, 1992
- Single‐Source III/V Precursors: A New Approach to Gallium Arsenide and Related SemiconductorsAngewandte Chemie International Edition in English, 1989
- Metal alkoxides as precursors for electronic and ceramic materialsChemical Reviews, 1989
- Textured tin oxide films produced by atmospheric pressure chemical vapor deposition from tetramethyltin and their usefulness in producing light trapping in thin film amorphous silicon solar cellsSolar Energy Materials, 1989
- Low Temperature MoCVD Routes to Thin Films from Transition Metal PrecursorsMRS Proceedings, 1989
- Chemical vapor deposition of copper and copper oxide thin films from copper(I) tert-butoxideChemistry of Materials, 1989
- Nonequilibrium boron doping effects in low-temperature epitaxial silicon filmsApplied Physics Letters, 1987