Crystallinity of emitting layer andelectroluminescence characteristics in multicolour ZnS Thin film electroluminescent device with a thick dielectric ceramic insulating layer
- 1 January 1990
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 193-194, 481-488
- https://doi.org/10.1016/s0040-6090(05)80058-6
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 8 references indexed in Scilit:
- Low Voltage Driven MOCVD-Grown ZnS:Mn Thin-Film Electroluminescent Devices Using Insulating BaTiO3 Ceramic SheetsJapanese Journal of Applied Physics, 1988
- High-Quality Zinc Sulfide Thin Films Grown by MOCVD Using Carbon Disulfide as A Sulfur SourceJapanese Journal of Applied Physics, 1988
- The preparation of ZnS:Mn electroluminescent layers by MOCVD using new manganese sourcesJournal of Crystal Growth, 1988
- Growth of hexagonal ZnS thin films by MOCVD using CS2 gas as a sulfur sourceJournal of Crystal Growth, 1988
- MOCVD Preparation of Polycrystalline ZnS Films with Pronounced Columnar GrainsJapanese Journal of Applied Physics, 1987
- AC-Thin Film ZnS:Mn Electroluminescent Device Prepared by Metal Organic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1985
- Highly Conductive and Transparent Aluminum Doped Zinc Oxide Thin Films Prepared by RF Magnetron SputteringJapanese Journal of Applied Physics, 1984
- Manganese doping of ZnS and ZnSe epitaxial layers grown by organometallic chemical vapour depositionJournal of Crystal Growth, 1982