MOCVD Preparation of Polycrystalline ZnS Films with Pronounced Columnar Grains
- 1 October 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (10A) , L1664-1666
- https://doi.org/10.1143/jjap.26.l1664
Abstract
ZnS films having good crystallinity are grown on glass by MOCVD using dimethylzinc and diethylsulphide. These films consist of very pronounced columnar grains that extend from the bottom to the top of the film. The crystal structure of these films is hexagonal. Thin film electroluminescent devices are fabricated using these films and their characteristics are measured.Keywords
This publication has 7 references indexed in Scilit:
- ZnS:Mn Electroluminescent Device Prepared by Metal-Organic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1986
- Memory Effect in AC Thin Film ZnS:Mn Electroluminescent Devices Prepared by Metal Organic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1986
- The MOCVD growth of ZnSe using Me2Zn, H2Se and SeEt2Journal of Crystal Growth, 1984
- The use of heterocyclic compounds in the organometallic chemical vapour deposition of epitaxial ZnS, ZnSe and ZnOJournal of Crystal Growth, 1984
- Cross-sectional transmission electron microscopy of electroluminescent thin films fabricated by various deposition methodsJournal of Crystal Growth, 1983
- X-ray diffraction study of thin electroluminescent ZnS films grown by atomic layer epitaxyPhysica Status Solidi (a), 1981
- Molecular beam epitaxial ZnSe:Mn dc electroluminescent cell with very low threshold voltageJournal of Applied Physics, 1981