Simple ICTS Measurement Method
- 1 May 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (5R) , 805
- https://doi.org/10.1143/jjap.21.805
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Trap Levels of Beryllium in SiliconJapanese Journal of Applied Physics, 1982
- Determination of the Density of State Distribution of a-Si:H by Isothermal Capacitance Transient SpectroscopyJapanese Journal of Applied Physics, 1981
- Isothermal Capacitance Transient Spectroscopy for Determination of Deep Level ParametersJapanese Journal of Applied Physics, 1980