Temperature effects in Schottky-barrier solar cells
- 15 August 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (4) , 257-259
- https://doi.org/10.1063/1.89036
Abstract
It has been reported recently that the short‐circuit current Isc of silicon Schottky‐barrier solar cell increases with increasing operating temperature. The increase in Isc has been attributed to the availability of extra photons, belonging to the long‐wavelength range of the solar spectrum, due to the lowering of the forbidden energy gap of silicon with increasing temperature. The purpose of the present letter is to show that the contribution to the increase of Isc due to the mechanism mentioned above is negligible and cannot explain the experimental results. Instead, it has been found that good agreement with experimental results is obtained when the increase in Isc with increasing temperature is calculated by taking the change of the absorption coefficient of the semiconductor with temperature at all wavelengths.Keywords
This publication has 7 references indexed in Scilit:
- Short-circuit capacitance of illuminated solar cellsApplied Physics Letters, 1975
- Temperature effects in Schottky-barrier silicon solar cellsApplied Physics Letters, 1975
- Analysis of carrier collection efficiencies of thin-film silicon solar cellsApplied Physics Letters, 1974
- Photovoltaic short-circuit minority carrier injectionApplied Physics Letters, 1974
- Fine Structure in the Absorption-Edge Spectrum of GePhysical Review B, 1957
- Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°KPhysical Review B, 1955
- D.C. Characteristics of Silicon and Germanium Point Contact Crystal Rectifiers. Part II. The Multicontact TheoryJournal of Applied Physics, 1950