Fabrication of ZnSe/ZnS quantum wires using high index GaP substrates
- 1 December 1996
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 80 (11) , 6539-6543
- https://doi.org/10.1063/1.363673
Abstract
ZnSe/ZnS quantum wires and quantum dots were grown on unpatterned substrates by molecular beam epitaxy. Several substrate orientations were compared. These structures exhibited a strong luminescence. A linear crystallographic dependence of the photoluminescence peak energy was observed when comparing structures grown in the same experimental conditions. All samples exhibited also strong zero-dimensional–one-dimensional confinement signatures. An empirical analysis is provided illuminating the issue involved by the redshift.This publication has 13 references indexed in Scilit:
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