Photoluminescence in (Ga,In)P at high pressure
- 15 May 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (15) , 10978-10981
- https://doi.org/10.1103/physrevb.39.10978
Abstract
Room-temperature photoluminescence measurements have been carried out at high pressure on (Ga,In)P layers grown by two different methods. The pressure dependence of the direct energy-band gap was fitted with a second-order function. Evidence of the direct-indirect band crossing has been observed from the reduction in the photoluminescence efficiency at about 2.8 GPa pressure.Keywords
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