Electroreflectance and photoreflectance of GaInP
- 31 August 1988
- journal article
- Published by Elsevier in Solar Cells
- Vol. 24 (3-4) , 307-312
- https://doi.org/10.1016/0379-6787(88)90082-8
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Ordering-induced changes in the optical spectra of semiconductor alloysApplied Physics Letters, 1988
- Electronic structure of ZnS, ZnSe, ZnTe, and their pseudobinary alloysPhysical Review B, 1987
- Indirect, quasidirect, and direct optical transitions in the pseudomorphic (44)-monolayer Si-Ge strained-layer superlattice on Si(001)Physical Review B, 1987
- Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band-gap energyApplied Physics Letters, 1987
- Structurally induced optical transitions in Ge-Si superlatticesPhysical Review Letters, 1987
- Modulation-spectroscopy study of theband structurePhysical Review B, 1983
- Determination of the five first interband transitions above the lowest indirect band gap of the aluminum antimonidePhysical Review B, 1982
- Temperature dependence of theenergy gap in gallium antimonidePhysical Review B, 1981
- Electroreflectance and Band Structure ofAlloysPhysical Review B, 1972
- High-Resolution Interband-Energy Measurements from Electroreflectance SpectraPhysical Review Letters, 1971