Activation Energies of Thermal Annealing of Radiation-Induced Damage in n- and p-channels of CMOS Integrated Circuits, Part II
Open Access
- 1 January 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 28 (6) , 4407-4412
- https://doi.org/10.1109/tns.1981.4335739
Abstract
In Part I of this work, tempering and isothermal curves of annealing of radiation damage in p- and n-channels of RCA CD4007A CMOS integrated circuits were obtained for both the commercial ("soft") and J-process (106 rad-hard) fabrication technologies. These experimental data were analyzed for activation energies of thermal annealing using two independent theoretical treatments. Analysis of the activation energy distributions obtained indicated that the radiation-induced charge trapping in the gate oxide occurs mainly around the impurity centers. In this work, the same procedures are applied to devices of RCA's Z-process (105 rad-hard). Thermal annealing investigation of the Z-process reveals an anomalous annealing behavior of the p-channels, as compared to the p-channels of the commercial and J-processes. The thermal annealing-induced shift of the threshold potential extends far below the original value, which necessitated the development of a new mathematical treatment. This new treatment is presented here.Keywords
This publication has 3 references indexed in Scilit:
- Activation Energies of Thermal Annealing of Radiation-Induced Damage in N- and P-Channels of CMOS Integrated CircuitsIEEE Transactions on Nuclear Science, 1980
- Prediction and Measurement Results of Radiation Damage to CMOS Devices on Board SpacecraftIEEE Transactions on Nuclear Science, 1977
- Prediction and Measurement of Radiation Damage to CMOS Devices on Board SpacecraftIEEE Transactions on Nuclear Science, 1976