Porous silicon as a substrate material for potentiometric biosensors
- 1 January 1996
- journal article
- Published by IOP Publishing in Measurement Science and Technology
- Vol. 7 (1) , 26-29
- https://doi.org/10.1088/0957-0233/7/1/003
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Ion-sensitive field-effect transistors with ultrathin Langmuir-Blodgett membranesSensors and Actuators B: Chemical, 1995
- Current-induced light emission from a porous silicon deviceIEEE Electron Device Letters, 1991
- The C-V method for characterizing ISFET or EOS devices with ion-sensitive membranesJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1990
- Investigations of porous silicon for vapor sensingSensors and Actuators A: Physical, 1990
- A theoretical model of the formation morphologies of porous siliconJournal of Electronic Materials, 1988
- Optical studies of the structure of porous silicon films formed in p-type degenerate and non-degenerate siliconJournal of Physics C: Solid State Physics, 1984
- Field effect transistor sensitive to penicillinAnalytical Chemistry, 1980
- Formation and oxidation of porous silicon by anodic reactionJournal of Crystal Growth, 1978
- Development of an Ion-Sensitive Solid-State Device for Neurophysiological MeasurementsIEEE Transactions on Biomedical Engineering, 1970
- Electrolytic Shaping of Germanium and SiliconBell System Technical Journal, 1956