Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes
- 1 September 2001
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 40 (9A) , L921-924
- https://doi.org/10.1143/jjap.40.l921
Abstract
We report on a novel pulsed atomic layer epitaxy (PALE) growth technique for quaternary AlInGaN films for ultraviolet optoelectronics applications. Using the PALE approach, quaternary AlInGaN/AlInGaN multiple quantum wells (MQWs) were successfully grown over sapphire substrates. These were characterized using X-ray diffraction, atomic force microscopy, and photoluminescence to establish structural and optical quality. Incorporating the PALE grown quaternary MQWs as the active layer we also demonstrated ultraviolet electroluminescence at 343 nm with an output power up to 0.12 mW at room temperature.Keywords
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