Optical bandgap formation in AlInGaN alloys
- 26 September 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (14) , 2136-2138
- https://doi.org/10.1063/1.1314288
Abstract
We report on the spectral dynamics of the reflectivity, site-selectively excited photoluminescence, photoluminescence excitation, and time-resolved luminescence in quaternary AlInGaN epitaxial layers grown on GaN templates. The incorporation of a few percents of In into AlGaN causes significant smoothening of the band-bottom potential profile in AlInGaN layers owing to improved crystal quality. An abrupt optical bandgap indicates that a nearly lattice-matched AlInGaN/GaN heterostructure with large energy band offsets can be grown for high-efficiency light-emitting devices.Keywords
This publication has 11 references indexed in Scilit:
- Time-resolved photoluminescence studies of AlxGa1−xN alloysApplied Physics Letters, 2000
- Lattice and energy band engineering in AlInGaN/GaN heterostructuresApplied Physics Letters, 2000
- Electrical characterization of isoelectronic In-doping effects in GaN films grown by metalorganic vapor phase epitaxyApplied Physics Letters, 2000
- Strain relief and its effect on the properties of GaN using isoelectronic In doping grown by metalorganic vapor phase epitaxyApplied Physics Letters, 1999
- High optical quality AlInGaN by metalorganic chemical vapor depositionApplied Physics Letters, 1999
- Piezoelectric doping in AlInGaN/GaN heterostructuresApplied Physics Letters, 1999
- Luminescence spectra and kinetics of disordered solid solutionsPhysical Review B, 1999
- Effect ofA- andB-cation substitutions on the phase stability ofceramicsPhysical Review B, 1999
- Localized exciton and its stimulated emission in surface mode from single-layerPhysical Review B, 1998
- Exciton region reflectance of homoepitaxial GaN layersApplied Physics Letters, 1996