Electrical characterization of isoelectronic In-doping effects in GaN films grown by metalorganic vapor phase epitaxy
- 4 February 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (7) , 897-899
- https://doi.org/10.1063/1.125622
Abstract
Indium isoelectronic doping was found to have profound effects on electrical properties of GaN films grown by metalorganic chemical vapor deposition. When a small amount of In atoms was introduced into the epilayer, the ideality factor of n-GaN Schottky diode was improved from 1.20 to 1.06, and its calculated saturation current could be reduced by 2 orders of magnitude as compared to that of the undoped sample. Moreover, it is interesting to note that In isodoping can effectively suppress the formation of deep levels at 0.149 and 0.601 eV below the conduction band, with the 0.149 eV trap concentration even reduced to an undetected level. Our result indicates that the isoelectronic In-doping technique is a viable way to improve the GaN film quality.Keywords
This publication has 14 references indexed in Scilit:
- Continuous Output Beam Steering in Vertical-Cavity Surface-Emitting Lasers with Two p-Type Electrodes by Controlling Injection Current ProfileJapanese Journal of Applied Physics, 1999
- Reliability of metal semiconductor field-effect transistor using GaN at high temperatureJournal of Applied Physics, 1998
- Deep level defects in n-type GaN grown by molecular beam epitaxyApplied Physics Letters, 1998
- Electron-irradiation-induced deep level in n-type GaNApplied Physics Letters, 1998
- Characterization of the Shallow and Deep Levels in Si Doped GaN Grown by Metal-Organic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1994
- Deep level defects in n-type GaNApplied Physics Letters, 1994
- Analysis of deep levels in n-type GaN by transient capacitance methodsJournal of Applied Physics, 1994
- An SO(10) × S4 scenario for naturally degenerate neutrinosPhysics Letters B, 1994
- Low defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In dopingApplied Physics Letters, 1986
- Isoelectronic Traps Due to Nitrogen in Gallium PhosphidePhysical Review Letters, 1965