Electrical properties of manganese-doped gallium phosphide

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Abstract
Single crystals of GaP : Mn were grown by the LEC and VGF techniques. From Hall-effect measurements, a simple acceptor defect with an energy level 0.4–0.43 eV from the valence band was observed, the higher values being characteristic of light doping. EPR shows an isotropic spectrum with a g value of 2.002 which suggests a d5 configuration in cubic symmetry. This implies that the principal defect in as-grown material involves Mn on lattice sites in place of gallium and that there is no complexing with vacancies or with other impurities. Other levels, however, are seen following anneals.