Quantum shift of the optical absorption edge in ultrathin amorphous hydrogenated germanium
- 27 July 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (4) , 264-266
- https://doi.org/10.1063/1.98468
Abstract
The optical absorption coefficient in ultrathin (∼10 Å) hydrogenated amorphous germanium (a‐Ge:H) layers deposited on hydrogenated amorphous silicon layers was determined by in situ reflectivity measurements. The decrease in the absorption coefficient in the ultrathin a‐Ge:H layers, compared to that of thick films, is explained by an upward shift in the conduction band edge due to quantum confinement of electrons with effective mass of 0.4m0.Keywords
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