Electrical transport in amorphous hydrogenated Ge/Si superlattices
- 8 September 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (10) , 569-571
- https://doi.org/10.1063/1.97098
Abstract
Electrical conductivity measurements on a-Ge:H/a-Si:H superlattices parallel and perpendicular to the layers are explained by a simple quantum well model which yields effective electron masses 0.4m0 for a-Ge:H and 0.3m0 for a-Si:H. Space-charge-limited currents observed at high fields are used to determine the density of deep gap states in the a-Ge:H layers.Keywords
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