Photoluminescence in hydrogenated amorphous germanium (a-Ge:H)
- 31 July 1985
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 55 (2) , 117-120
- https://doi.org/10.1016/0038-1098(85)90260-1
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Paramagnetic states in doped amorphous silicon and germaniumSolid State Communications, 1983
- Electron spin resonance of doped glow‐discharge amorphous germaniumPhysica Status Solidi (b), 1983
- Electronic properties of doped glow-discharge amorphous germaniumSolar Energy Materials, 1982
- Optical absorption, photoconductivity, and photoluminescence of glow-discharge amorphousalloysPhysical Review B, 1982
- Luminescence and recombination in hydrogenated amorphous siliconAdvances in Physics, 1981
- Electronic Properties of Amorphous SixGe1−x:H FilmsPhysica Status Solidi (b), 1980
- The influence of spin defects on recombination and electronic transport in amorphous siliconPhilosophical Magazine Part B, 1980
- Hydrogen evolution and defect creation in amorphous Si: H alloysPhysical Review B, 1979
- Electronic transport and photoconductivity in phosphorus-doped amorphous germaniumPhilosophical Magazine Part B, 1979
- Luminescence studies of plasma-deposited hydrogenated siliconPhysical Review B, 1978