Energy Transport and Size Effects in the Photoluminescence of Amorphous-Germanium/Amorphous-Silicon Multilayer Structures

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Abstract
The low-temperature diffusion length of photogenerated electron-hole pairs in hydrogenated amorphous germanium and silicon has been determined from measurements of photoluminescence spectra and quantum efficiency in multilayer structures, as a function of the sublayer thicknesses. When the sublayer thickness is small compared with this diffusion length, the photoluminescence in amorphous germanium is enhanced by more than 2 orders of magnitude.