Formation of monolithic masks for 0.25 μm x-ray lithography
- 9 December 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (24) , 3105-3107
- https://doi.org/10.1063/1.105778
Abstract
We have constructed monolithic masks for proximity x-ray lithography by forming 1 μm thick polycrystalline Si membranes directly on glass support frames. Finished masks are 78 mm in diameter and ∼5 mm thick, with the Si membrane spanning 27 mm. The monolithic design provides simple processing and unprecedented flatness of 30 nm across the membrane and <500 nm across the entire disk. Mask blanks were metallized with 500 nm of W that was sputter deposited under conditions that hold the film stress <50 MPa. Tungsten was patterned by reactive ion etching to form features as small as 0.25 μm.Keywords
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