Nucleation of misfit dislocations in strained-layer InGaAs on GaAs
- 1 September 1990
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Letters
- Vol. 62 (3) , 131-137
- https://doi.org/10.1080/09500839008215049
Abstract
Misfit dislocations at the interface of a thin epitaxial layer of In0-18Ga0-82As on GaAs have been studied by glancing incidence double-crystal synchrotron X-ray topography. The misfit dislocation density increases dramatically as the layer thickness increases from 17 to 18nm across the sample. Clear evidence for the nucleation of misfit dislocations at threading dislocations from the substrate is presented.Keywords
This publication has 12 references indexed in Scilit:
- X-ray topography of the coherency breakdown in GexSi1−x/Si(100)Applied Physics Letters, 1988
- Interference structures in double-crystal X-ray rocking curves from very thin multiple epitaxial layersSemiconductor Science and Technology, 1988
- Controversy of critical layer thickness for InGaAs/GaAs strained-layer epitaxyApplied Physics Letters, 1988
- Composition and lattice-mismatch measurement of thin semiconductor layers by x-ray diffractionJournal of Applied Physics, 1987
- X-ray topographic investigation of microdeformation of InSb single crystalsPhilosophical Magazine A, 1987
- Simulation of X-ray double-crystal rocking curves at multiple and inhomogeneous heteroepitaxial layersJournal of Applied Crystallography, 1985
- Oscillations in the surface structure of Sn-doped GaAs during growth by MBESurface Science, 1981
- A new type of source generating misfit dislocationsApplied Physics B Laser and Optics, 1978
- Misfit dislocation characteristics in quarternary heterojunctions Ga1-xAlxAs1-yPy/GaAs analysed by synchrotron radiation white beam topographyJournal of Crystal Growth, 1978
- Use of misfit strain to remove dislocations from epitaxial thin filmsThin Solid Films, 1976