Positron beam defect profiling of silicon epitaxial layers
- 15 September 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (6) , 3003-3006
- https://doi.org/10.1063/1.349329
Abstract
Epitaxial layers of silicon grown on a Si(100) substrate by molecular-beam epitaxy (MBE) and solid-phase epitaxy (SPE) have been investigated by slow positron beam analysis methods. Results of Doppler broadening measurements revealed that the S parameter of the SPE material is considerably higher than the value measured for the MBE layer, indicative of a higher concentration of open-volume defects in the former material. This was confirmed by measurements of the positronium fraction at elevated temperatures.This publication has 10 references indexed in Scilit:
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