Galvanomagnetic Behavior of Hot Electrons in Semi-Insulating GaAs
- 1 December 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (12R) , 3327
- https://doi.org/10.1143/jjap.30.3327
Abstract
A new behavior of highly accelerated hot electrons in a magnetic field is observed in semi-insulating GaAs (S.I.GaAs). In an electric field at a few kV/cm, the conduction current in S.I.GaAs increases steeply. The abrupt current increase has been interpreted by the trap-filling model of Lampert. The abrupt current increase shows interesting behavior in a magnetic field. By magnetic field application (at ∼0.3 T), the current increment is cut off. This cutoff behavior requires a new concept of the conduction mechanism in S.I.GaAs. This report suggests that cyclotron cutoff occurs. It implies that the drifting electrons suffer no scattering, just as in vacuum. The scattering relaxation time of an electron is estimated to be extremely long, such as 50 ps.Keywords
This publication has 7 references indexed in Scilit:
- Impact ionization of deep traps in semi-insulating GaAs substratesJournal of Applied Physics, 1990
- Current-controlled negative differential conductivity in semi-insulating GaAsApplied Physics Letters, 1990
- Photorefractive characterization of deep level compensation in semi-insulating GaAsApplied Physics Letters, 1989
- Mechanism of electrostatic potential conduction in semi-insulating substratesJournal of Applied Physics, 1989
- Mechanism of surface conduction in semi-insulating GaAsApplied Physics Letters, 1984
- Carrier injection and backgating effect in GaAs MESFET'sIEEE Electron Device Letters, 1982
- Electrical and photoelectronic properties of Cr-doped semi-insulating GaAsJournal of Applied Physics, 1979