Threshold current reduction in InGaN MQW laserdiode with λ/4air/semiconductor Bragg reflectors
- 28 September 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (20) , 1706-1707
- https://doi.org/10.1049/el:20001230
Abstract
A 13% reduction in the threshold current density of InGaN laser diodes is demonstrated upon the introduction of two 5λ/4 air/nitride Bragg reflectors. These are defined at one end of the laser cavity by means of focused ion beam etching.Keywords
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