Relation between Leakage Current in PIN Photodiodes and Defects in InGaAs(P)/InP Heterostructures Grown Low Pressure MOCVD
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- An x-ray photoelectron spectroscopy study on ozone treated InP surfacesJournal of Vacuum Science & Technology A, 1987
- Chemical cleaning of InP surfaces: Oxide composition and electrical propertiesJournal of Applied Physics, 1984