Metalorganic chemical vapor deposition InGaAs p-i-n photodiodes with extremely low dark current
- 29 February 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (9) , 733-735
- https://doi.org/10.1063/1.99363
Abstract
Planar, Zn‐diffused InP/InGaAs p‐i‐n photodiodes, which have been fabricated from material grown by metalorganic chemical vapor deposition, have been shown to exhibit extremely low dark current. The typical dark current measured for 100‐μm‐diam devices was 10 pA at −10 V bias, with some devices having values as low as 3 pA (3.8×10−8 A/cm2). Excellent uniformity of the dark current was found. A low capacitance of 0.45 pF, a responsivity at 1.3 μm of 0.90 A/W, and rise/fall times of less than 150 ps were measured at −5 V bias.Keywords
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