Optical gain of InGaAsN∕InP quantum wells for laser applications

Dilute nitride structures offer the possibility of growing tensile-strained quantum well lasers on InP substrate emitting in the telecommunication $L$ band. The authors have calculated the characteristics of $\mathrm{In}\mathrm{Ga}\mathrm{As}\left(\mathrm{N}\right)∕\mathrm{In}\mathrm{As}\mathrm{P}∕\mathrm{In}\mathrm{P}$ quantum well structures and compared to the ones of N-free quantum well structures. It appears that the introduction of a fraction of nitrogen as small as 0.3% is enough to pass over the emission wavelength of $1.57\mu \mathrm{m}$ and induces an increase of the material gain by a factor 3.