1.55 μm emission from GaInNAs with indium-induced increase of N concentration
- 2 September 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (10) , 1992-1994
- https://doi.org/10.1063/1.1606886
Abstract
GaInNAs/GaAs multiple quantum well (MQW) structures were grown by metalorganic molecular-beam epitaxy (MOMBE). Increase of the N concentration in GaInNAs with increasing In concentration was observed. This trend of enhanced N incorporation for the higher In concentration made it possible to realize long-wavelength emission of 1.55 μm from a GaInNAs/GaAs MQW grown by MOMBE. This result is compared with the previous reports on the growth of GaInNAs alloys and the main factors which lead to the enhanced N incorporation are discussed.Keywords
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