GaInNAs quantum well structures for 1.55μm emission on GaAs by atmospheric pressure metalorganic vapor phase epitaxy

This publication has 14 references indexed in Scilit:

• Long wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy
  Applied Physics Letters, 2000
• Photoluminescence-linewidth-derived reduced exciton mass for ${\mathrm{In}}_y{\mathrm{Ga}}_{1-y}{\mathrm{As}}_{1-x}{\mathrm{N}}_x$ alloys
  Physical Review B, 2000
• GaInAsN/GaAs laser diodes operating at 1.52 µm
  Electronics Letters, 2000
• Self-assembled GaInNAs quantum dots for 1.3 and 1.55 μm emission on GaAs
  Applied Physics Letters, 2000
• Optical characterization of (GaIn)(NAs)/GaAs MQW structures
  Journal of Electronic Materials, 2000
• Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 μm wavelength regime
  Applied Physics Letters, 1999
• Band Anticrossing in GaInNAs Alloys
  Physical Review Letters, 1999
• InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
  Applied Physics Letters, 1999
• Growth of GaAsN/GaAs, GaInAsN/GaAs and GaInAsN/GaAs quantum wells by low-pressure organometallic chemical vapor deposition
  Journal of Crystal Growth, 1998
• GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
  Japanese Journal of Applied Physics, 1996