Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 μm wavelength regime
- 19 April 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (16) , 2271-2273
- https://doi.org/10.1063/1.123821
Abstract
(GaIn)(NAs) vertical-cavity surface-emitting lasers for room-temperature emission at 1.3 μm wavelength are designed and grown by metal-organic vapor-phase epitaxy using dimethylhydrazine and tertiarybutylarsine. Room-temperature operation at wavelengths up to 1.285 μm is achieved with low optical pumping thresholds between 1.6 and 2.0 kW/cm2. Stimulated emission dynamics after femtosecond optical pumping are measured and compare favorably with results on (GaIn)As/Ga(PAs)-based structures.Keywords
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