GaSb vertical-cavity surface-emitting lasers for the 1.5 μm range
- 30 March 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (13) , 1638-1640
- https://doi.org/10.1063/1.121138
Abstract
We have developed GaSb/AlGaSb vertical-cavity surface-emitting lasers (VCSELs) by using solid source molecular beam epitaxy. The reflectivity spectra of the VCSELs show a very narrow (0.9 meV) cavity resonance at 1.5 μm. cw optical pumping results in lasing at the wavelength of the cavity resonance with a laser threshold density of 530 W/cm2 at 77 K.Keywords
This publication has 11 references indexed in Scilit:
- Evolution of GaSb epitaxy on GaAs(001)-c(4×4)Journal of Vacuum Science & Technology A, 1996
- Room-temperature continuous-wave operation of 1.54-μm vertical-cavity lasersIEEE Photonics Technology Letters, 1995
- Ultralow threshold current vertical-cavity surface-emittinglasersobtained with selective oxidationElectronics Letters, 1995
- High reflectivity 1.55 μm (Al)GaSb/AlSb Bragg mirror grown by molecular beam epitaxyApplied Physics Letters, 1994
- Controlled spontaneous emission in room-temperature semiconductor microcavitiesApplied Physics Letters, 1992
- High reflectivity 1.55 μm InP/InGaAsP Bragg mirror grown by chemical beam epitaxyApplied Physics Letters, 1991
- Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterizationIEEE Journal of Quantum Electronics, 1991
- Refractive indices of AlSb and GaSb-lattice-matched AlxGa1−xAsySb1−y in the transparent wavelength regionJournal of Applied Physics, 1991
- Effect of an AlAs/GaAs mirror on the spontaneous emission of an InGaAs-GaAs quantum wellApplied Physics Letters, 1990
- The temperature and pressure dependence of refractive indices of some III–V and II–VI binary semiconductorsInfrared Physics, 1986