GaInAsN/GaAs laser diodes operating at 1.52 µm
- 6 July 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (14) , 1208-1209
- https://doi.org/10.1049/el:20000870
Abstract
GaInAsN/GaAs double quantum well (DQW) lasers have been grown by solid source molecular beam epitaxy (MBE). Room-temperature pulsed operation is demonstrated for a ridge waveguide laser diode at a wavelength of 1517 nm. This is the first report of room-temperature laser emission in the 1.5 µm range based on GaAs.Keywords
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