Experimental studies of the conduction-band structure of GaInNAs alloys
- 12 July 2002
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 17 (8) , 803-814
- https://doi.org/10.1088/0268-1242/17/8/309
Abstract
No abstract availableKeywords
This publication has 55 references indexed in Scilit:
- Proposal for a spin-polarized solar batteryApplied Physics Letters, 2001
- Investigations on GaAsSbN/GaAs quantum wells for 1.3–1.55μm emissionJournal of Crystal Growth, 2001
- Synthesis of InNxP1−x thin films by N ion implantationApplied Physics Letters, 2001
- Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurementsApplied Physics Letters, 1999
- N incorporation in GaP and band gap bowing of GaNxP1−xApplied Physics Letters, 1996
- N incorporation in InP and band gap bowing of InNxP1−xJournal of Applied Physics, 1996
- Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN AlloysPhysical Review Letters, 1996
- Gas-Source Molecular Beam Epitaxy of GaNxAs1-x Using a N Radical as the N SourceJapanese Journal of Applied Physics, 1994
- Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy LayersJapanese Journal of Applied Physics, 1992
- Luminescence quenching and the formation of the GaP1−xNx alloy in GaP with increasing nitrogen contentApplied Physics Letters, 1992