Investigations on GaAsSbN/GaAs quantum wells for 1.3–1.55μm emission
- 28 June 2001
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 227-228, 553-557
- https://doi.org/10.1016/s0022-0248(01)00765-5
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Room temperature continuous wave InGaAsN quantumwellvertical-cavity lasers emitting at 1.3 µmElectronics Letters, 2000
- GaInAsN/GaAs laser diodes operating at 1.52 µmElectronics Letters, 2000
- 1.3-μm GaInNAs-AlGaAs distributed feedback lasersIEEE Photonics Technology Letters, 2000
- High power CW operation of InGaAsN lasers at 1.3µmElectronics Letters, 1999
- GaAsSbN: a new low-bandgap material for GaAs substratesElectronics Letters, 1999
- Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction inwithPhysical Review Letters, 1999
- GaAsSb: A novel material for 1.3 µm VCSELsElectronics Letters, 1998
- Room-temperature pulsed operation of strained GaInNAs/GaAsdoublequantum well laser diode grown by metal organic chemical vapourdepositionElectronics Letters, 1998
- GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature PerformanceJapanese Journal of Applied Physics, 1996
- Temperature dependence of the dielectric function of germaniumPhysical Review B, 1984