Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-μm-wavelength regime

8 May 2001

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 78 (20) , 3009-3011
https://doi.org/10.1063/1.1371963

Abstract

Optical gain spectra of (GaIn)(NAs)/GaAs quantum-well lasers operating in the 1.3-μm-emission-wavelength regime are measured and compared to those of a commercial (GaIn)(AsP)/InP structure. Good agreement of the experimental results with computed spectra of a microscopic many-body theory is obtained. Due to the contributions of a second confined subband, a spectrally broad gain region is expected for (GaIn)(NAs)/GaAs at elevated carrier densities.

Keywords

This publication has 28 references indexed in Scilit:

Room temperature continuous wave InGaAsN quantumwellvertical-cavity lasers emitting at 1.3 µm
Electronics Letters, 2000
GaInAsN/GaAs laser diodes operating at 1.52 µm
Electronics Letters, 2000
Microscopic theory of gain, absorption, and refractive index in semiconductor laser materials-influence of conduction-band nonparabolicity and Coulomb-induced intersubband coupling
IEEE Journal of Quantum Electronics, 1999
Band Anticrossing in GaInNAs Alloys
Physical Review Letters, 1999
Investigations of (GaIn)(NAs) bulk layers and (GaIn)(NAs)/GaAs multiple quantum well structures grown using tertiarybutylarsine (TBAs) and 1,1-dimethylhydrazine (UDMHy)
Journal of Crystal Growth, 1998
Dynamics of gain in vertical cavity lasers and amplifiers at 1.53 μm using femtosecond photoexcitation
Applied Physics Letters, 1998
Measurement and calculation of gain spectra for (GaIn)As/(AlGa)As single quantum well lasers
Applied Physics Letters, 1998
GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
Japanese Journal of Applied Physics, 1996
High reflectivity 1.55 μm InP/InGaAsP Bragg mirror grown by chemical beam epitaxy
Applied Physics Letters, 1991
Effective Bloch equations for semiconductors
Physical Review B, 1988