Investigations of (GaIn)(NAs) bulk layers and (GaIn)(NAs)/GaAs multiple quantum well structures grown using tertiarybutylarsine (TBAs) and 1,1-dimethylhydrazine (UDMHy)
- 1 December 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 195 (1-4) , 391-396
- https://doi.org/10.1016/s0022-0248(98)00651-4
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Metal organic vapor phase epitaxy growth of GaAsN on GaAs using dimethylhydrazine and tertiarybutylarsineApplied Physics Letters, 1997
- Room temperature continuous-wave photopumped operationof 1.22 µm GaInNAs/GaAs single quantum well vertical-cavity surface-emittinglaserElectronics Letters, 1997
- Room-Temperature Operation of GaInNAs/GaInP Double-Heterostructure Laser Diodes Grown by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1997
- Localization and percolation in semiconductor alloys: GaAsN vs GaAsPPhysical Review B, 1996
- Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature PerformanceJapanese Journal of Applied Physics, 1996
- Extremely large N content (up to 10%) in GaNAs grown by gas-source molecular beam epitaxyJournal of Crystal Growth, 1996
- Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN AlloysPhysical Review Letters, 1996
- Gas-Source Molecular Beam Epitaxy of GaNxAs1-x Using a N Radical as the N SourceJapanese Journal of Applied Physics, 1994
- Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and BoronJapanese Journal of Applied Physics, 1993