Dependence of the Ambipolar Diffusion in Silicon on the Carrier Density
- 16 September 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 79 (1) , K85-K88
- https://doi.org/10.1002/pssa.2210790159
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Ambipolar diffusion of high-density electrons and holes in Ge, Si, and GaAs: Many-body effectsPhysical Review B, 1982
- HalbleiterphysikPublished by Springer Nature ,1982
- Diffusion of electrons and holes in semiconductors under conditions of gradients of lattice temperature and carrier concentrationJournal of Physics C: Solid State Physics, 1981
- Picosecond Ellipsometry of Transient Electron-Hole Plasmas in GermaniumPhysical Review Letters, 1974