Contactless measurement of the Si-buried oxide interfacial charges in SOI wafers with surface photovoltage technique
- 30 June 1997
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 36 (1-4) , 351-357
- https://doi.org/10.1016/s0167-9317(97)00078-6
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Low-field charge injection in SIMOX buried oxidesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Surface photovoltage monitoring of the Si-buried oxide interface chargesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- SOI CMOS front-end technology: options and tradeoffsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A high speed 0.6- mu m 16 K CMOS gate array on a thin SIMOX filmIEEE Transactions on Electron Devices, 1993
- Time-dependent hole and electron trapping effects in SIMOX buried oxidesIEEE Transactions on Nuclear Science, 1990
- Native Oxide Growth on Silicon Surface in Ultrapure Water and Hydrogen PeroxideJapanese Journal of Applied Physics, 1990
- Ideal hydrogen termination of the Si (111) surfaceApplied Physics Letters, 1990