An improved inverted /spl delta/-doped GaAs/InGaAs pseudomorphic heterostructure grown by MOCVD
- 1 September 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 15 (9) , 330-332
- https://doi.org/10.1109/55.311124
Abstract
This letter demonstrates a novel GaAs/In/sub 0.25/Ga/sub 0.75/As/GaAs pseudomorphic heterostructure with /spl delta/-doping on the buffer prepared by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The proposed device with a 1.5/spl times/80 /spl mu/m/sup 2/ gate reveals an extrinsic transconductance as high as 250 (305) mS/mm and a saturation current density as high as 790 (890) mA/mm at 300 (77) K. Significantly improvements on forward gate voltage swing (up to 3 V) and on reverse leakage current (smaller than 10 /spl mu/A/mm at -6.5 V) are demonstrated due to inverted parallel conduction (IPC) effect. We also carried out secondary-ion mass spectrometry (SIMS) profiles to confirm the quality of the proposed device.Keywords
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