Effects of gate depletion and boron penetration on matching of deep submicron CMOS transistors

This publication has 5 references indexed in Scilit:

• A Fully Analytical MOSFET Model Parameter Extraction Approach
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2005
• 0.5 micron CMOS for high performance at 3.3 V
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• The effect of statistical dopant fluctuations on MOS device performance
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's
  IEEE Transactions on Electron Devices, 1994
• Matching properties of MOS transistors
  IEEE Journal of Solid-State Circuits, 1989