Quasiballistic transport of hot holes in GaAs submicron channels

We investigate the ballistic motion of hot holes in a submicron channel fabricated from a modulation-doped $p$ -type $\mathrm{Ga}\mathrm{As}∕\left(\mathrm{Al}\mathrm{Ga}\right)\mathrm{As}$ quantum well heterostructure. We observe peaks in the low temperature differential conductance, which we attribute to ballistic motion of holes limited by the onset of longitudinal-optical (LO) phonon emission when the voltage drop along the channel corresponds to an integer multiple of the LO-phonon energy.