Inverted cavity GaAs/InGaAs asymmetric Fabry–Perot reflection modulator
- 30 September 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (14) , 1664-1666
- https://doi.org/10.1063/1.106261
Abstract
We report the realization of an inverted cavity (through‐substrate) reflection modulator based on an asymmetric Fabry–Perot configuration that utilizes the transparency of the GaAs substrate for operation at wavelengths appropriate for strained‐layer GaAs/InGaAs multiple quantum wells. At room temperature, a contrast ratio of 12:1 is realized along with a dynamic range of 20% at an operating wavelength of 9565 Å.Keywords
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