Optical absorption and modulation behavior of strained InxGa1−xAs/GaAs(100)(x≤0.25) multiple quantum well structures grown via molecular beam epitaxy
- 3 December 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (23) , 2478-2480
- https://doi.org/10.1063/1.103835
Abstract
We report on the optical absorption and modulation characteristics of strained InxGa1−xAs/GaAs(0.1≤x≤0.25) multiple quantum well (MQW) structures grown on GaAs (100) substrates which also included regions of prepatterned mesas. Sharp excitonic features were realized in samples optimally grown by employing reflection high‐energy electron diffraction. High optical quality MQW structures as thick as 1.5 μm are realized. To date, the highest modulation per unit field at low fields (<50 kV/cm) in this system is achieved.Keywords
This publication has 10 references indexed in Scilit:
- Growth of InxGa1−xAs on patterned GaAs(100) substratesJournal of Vacuum Science & Technology B, 1990
- Molecular Beam Epitaxical Growth of AlxGa1-xAs on non- Planar Patterned GaAs (100)MRS Proceedings, 1989
- Molecular‐beam epitaxially grown spatial light modulators with charge‐coupled‐device addressingJournal of Vacuum Science & Technology A, 1988
- GaInAs/GaAs strained layer MQW electroabsorption optical modulator and self-electro-optic effect deviceElectronics Letters, 1988
- Variation of the critical layer thickness with In content in strained InxGa1−xAs-GaAs quantum wells grown by molecular beam epitaxyApplied Physics Letters, 1987
- Electroabsorption in an InGaAs/GaAs strained-layer multiple quantum well structureApplied Physics Letters, 1986
- Optimal surface and growth front of III–V semiconductors in molecular beam epitaxy: A study of kinetic processes via reflection high energy electron diffraction specular beam intensity measurements on GaAs(100)Journal of Vacuum Science & Technology B, 1986
- Optical investigation of a new type of valence-band configuration in As-GaAs strained superlatticesPhysical Review B, 1985
- Copper/oxygen glow‐discharge spectrometryJournal of Vacuum Science and Technology, 1977
- Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or CompoundsJournal of Applied Physics, 1970