Fermi-level pinning at nickel disilicide–silicon interface

It has been found that the single-crystal ${\mathrm{NiSi}}_2$ Schottky-barrier height changes from 0.65 to 0.79 eV, depending upon the type-B ${\mathrm{NiSi}}_2$ film thickness on Si(111). In this study, the barrier height is calculated by an interface-defect model and compared with our experimental results. The calculated barrier height seems to give a good explanation of our experimental results.