The sublinear relationship between index change and carrier density in 1.5 and 1.3 mu m semiconductor lasers
- 1 June 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 4 (6) , 534-537
- https://doi.org/10.1109/68.141958
Abstract
The carrier-induced index change was measured using a novel injection-reflection technique in combination with differential carrier lifetime data. The observed relation between index change and injected carrier density at bandgap wavelength is nonlinear and is approximately given by delta n/sub act/=-6.1*10/sup -14/ (N)/sup 0.66/ for a 1.5- mu m laser and delta n/sub act/=-1.3*10/sup -14/ (N)/sup 0.68/ for a 1.3- mu m laser. The carrier-induced index change for a 1.3- mu m laser at 1.53- mu m wavelength is smaller and is given by delta n/sub act/=-9.2*10/sup -16/ (N)/sup 0.72/.<>Keywords
This publication has 9 references indexed in Scilit:
- Carrier-induced differential refractive index in GaInAsP-GaInAs separate confinement multiquantum well lasersIEEE Photonics Technology Letters, 1990
- The carrier effects on the change of refractive index for n-type GaAs at λ=1.06,1.3, and 1.55 μmJournal of Applied Physics, 1990
- Carrier-induced change in refractive index of InP, GaAs and InGaAsPIEEE Journal of Quantum Electronics, 1990
- Three-electrode DFB wavelength tunable FSK transmitter at 1.53 μmElectronics Letters, 1989
- InGaAsP/InP optical switches using carrier induced refractive index changeApplied Physics Letters, 1987
- Effect of nonlinear gain reduction on semiconductor laser wavelength chirpingApplied Physics Letters, 1986
- The carrier-induced index change in AlGaAs and 1.3 µm InGaAsP diode lasersIEEE Journal of Quantum Electronics, 1983
- Carrier lifetime measurement for determination of recombination rates and doping levels of III-V semiconductor light sourcesApplied Physics Letters, 1982
- Theory of the linewidth of semiconductor lasersIEEE Journal of Quantum Electronics, 1982