Carrier-induced differential refractive index in GaInAsP-GaInAs separate confinement multiquantum well lasers
- 1 September 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 2 (9) , 620-622
- https://doi.org/10.1109/68.59330
Abstract
Measurements of subthreshold spectra on SCMQW (separate-confinement multiquantum-well) lasers with the number of wells varying from three to nine have led to the determination of the carrier-induced differential refractive index d mu /dN approximately -3.6*10/sup -20/. This value is 1.8 greater than in the case of conventional bulk lasers. This study allows for a better understanding of quantum well laser parameters such as the spectral linewidth enhancement factor. It is also useful for the design of tunable lasers.<>Keywords
This publication has 12 references indexed in Scilit:
- High performance DFB-MQW lasers at 1.5 μm grown by GSMBEElectronics Letters, 1990
- Very narrow spectral linewidth of GaInAs MQW-DFB-PPIBH laser diodesElectronics Letters, 1989
- Optical gain and loss processes in GaInAs/InP MQW laser structuresIEEE Journal of Quantum Electronics, 1989
- Spontaneous emission factor and waveguiding in GaAs/AlGaAs MQW lasersIEEE Journal of Quantum Electronics, 1989
- Spectral linewidth and resonant frequency characteristics of InGaAsP/InP multiquantum well lasersIEEE Journal of Quantum Electronics, 1989
- Linewidth Enhancement Factor in GaAs/AlGaAs Multi-Quantum-Well LasersJapanese Journal of Applied Physics, 1985
- The carrier-induced index change in AlGaAs and 1.3 µm InGaAsP diode lasersIEEE Journal of Quantum Electronics, 1983
- The effects of loss and nonradiative recombination on the temperature dependence of threshold current in 1.5-1.6 µm GalnAsP/InP lasersIEEE Journal of Quantum Electronics, 1983
- Injected carrier effects on modal properties of 1.55 µm GaInAsP lasersIEEE Journal of Quantum Electronics, 1983
- Spontaneous Recombination, Gain and Refractive Index Variation for 1.6 µm Wavelength InGaAsP/InP LasersJapanese Journal of Applied Physics, 1981