Injected carrier effects on modal properties of 1.55 µm GaInAsP lasers
- 1 June 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 19 (6) , 969-974
- https://doi.org/10.1109/jqe.1983.1071969
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Anomalous effect of carriers on dielectric constant of (In,Ga)(As,P) lasers operating at 1.3 μm wavelengthElectronics Letters, 1982
- An analytic study of (GaAl)As gain guided lasers at thresholdIEEE Journal of Quantum Electronics, 1982
- Wavelength variation of 1.6 µm wavelength buried heterostructure GaInAsP/InP lasers due to direct modulationIEEE Journal of Quantum Electronics, 1982
- Carrier-induced index change in AlGaAs double-heterostructure lasersElectronics Letters, 1981
- Self-focusing effects in pulsating AlxGa1-xAs double-heterostructure lasersIEEE Journal of Quantum Electronics, 1981
- Photoelastic waveguides and their effect on stripe-geometry GaAs/Ga1−xAlxAs lasersJournal of Applied Physics, 1979
- Effect of injection current on the dielectric constant of an inbuilt waveguide in twin-transverse-junction stripe lasersElectronics Letters, 1979
- Gain spectra in GaAs double−heterostructure injection lasersJournal of Applied Physics, 1975
- Mode guidance parallel to the junction plane of double-heterostructure GaAs lasersJournal of Applied Physics, 1973
- Dispersion of the Index of Refraction Near the Absorption Edge of SemiconductorsPhysical Review B, 1964