Bound and quasibound states in leaky quantum wells
- 15 September 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 46 (11) , 6969-6974
- https://doi.org/10.1103/physrevb.46.6969
Abstract
In this work, we analyze a special type of quantum-well structure, called a ‘‘leaky’’ quantum well, which has an energy ‘‘window’’ opened near its bottom. It is shown that in this type of quantum well, whereas the upper states are bound states, the lower states located in the window are quasibound and hence allow the electron wave to leak out. The analysis, based on k⋅P theory, provides further support to the utilization of leaky quantum wells for intersubband lasing and reveals interesting well width and barrier thickness dependences of the lifetime of a lower quasibound state. Moreover, it is shown that an energy level in this type of quantum well could move either up or down as the barrier thickness increases, depending on whether it is above or below a stable point, the existence of which is also established in this work.Keywords
This publication has 15 references indexed in Scilit:
- Population inversion through resonant interband tunnelingApplied Physics Letters, 1991
- Resonant interband tunneling via Landau levels in polytype heterostructuresPhysical Review B, 1991
- Investigation of the influence of the well and the barrier thicknesses in GaSb/AlSb/GaSb/AlSb/InAs double-barrier interband tunneling structuresIEEE Electron Device Letters, 1990
- Resonant interband coupling in single-barrier heterostructures of InAs/GaSb/InAs and GaSb/InAs/GaSbJournal of Applied Physics, 1990
- Can barriers with inverted tunneling rates lead to subband population inversion?Applied Physics Letters, 1990
- Negative differential resistance in InAs/GaSb single-barrier heterostructuresElectronics Letters, 1989
- Interband tunneling in polytype GaSb/AlSb/InAs heterostructuresApplied Physics Letters, 1989
- New negative differential resistance device based on resonant interband tunnelingApplied Physics Letters, 1989
- Resonant interband tunnel diodesApplied Physics Letters, 1989
- Polytype Superlattices and Multi-HeterojunctionsJapanese Journal of Applied Physics, 1981