Grain boundary and vacancy diffusion model for electromigration-induced damage in thin film conductors
- 1 October 1980
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 72 (3) , 451-456
- https://doi.org/10.1016/0040-6090(80)90530-1
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- The effect of high d.c. density stressing on pre-existing voids in thin gold filmsThin Solid Films, 1979
- Nucleation of voids and their growth during electromigrationJournal of Applied Physics, 1973
- Void Formation and Growth During Electromigration in Thin FilmsJournal of Applied Physics, 1971
- Electromigration Damage in Aluminum Film ConductorsJournal of Applied Physics, 1970
- ELECTROMIGRATION IN SINGLE-CRYSTAL ALUMINUM FILMSApplied Physics Letters, 1970
- The effects of dielectric overcoating on electromigration in aluminum interconnectionsIEEE Transactions on Electron Devices, 1969
- Electromigration—A brief survey and some recent resultsIEEE Transactions on Electron Devices, 1969
- Electromigration in Thin Al FilmsJournal of Applied Physics, 1969
- DIRECT TRANSMISSION ELECTRON MICROSCOPE OBSERVATION OF ELECTROTRANSPORT IN ALUMINUM THIN FILMSApplied Physics Letters, 1967
- Stress Annealing in Vacuum Deposited Copper FilmsProceedings of the Physical Society. Section B, 1957